<^emi-donductoi ^pioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 IRFP360, irfp362 avalanche-energy-rated n-channel power mosfets 23 a and 20 a, 400 v rosion) = 0.20 o and 0.25 o features: ? single pulse avalanche energy rated ? soa is power-dissipation /imited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance n-channel enhancement mode d mcs-4mm terminal diagram the IRFP360 and irfp362 are advanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera- tion these are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits the irfp-types are supplied in the jedec to-247 plastic package. terminal designation drain (tab) o jedec to-247 absolute maximum ratings parameter 'd & tc - 25*c continuous drain current ]0 ? tc * 100c continuous drain current iqm pulsed drain currant ? pd ? tc " 25c max power dissipation linear derating factor vqs gate-to-source voltage eas single pulse avalanche erfjrgy ? iar avalanche current ? tj operating junction tstg storaoe temperature rang,* lead temperature ihfp360 23 14 92 ibfp362 20 13 80 250 20 20 1200 (see f<9 14) 23 -55 to 150 300 (0.083 in (1 6mm) from case for 10s) units a a a w wrc v mj a ?c ?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nl semi-conductors is believed to be both accurate and reliable at the time of going (o press. however, nj semi-conductors assumes no responsibility tor any errors or omissions discovered in its use i semi-conductors enuniniges customers to verity that datasheets ;ire current before placing orders.
IRFP360, irfp362 electrical characteristics at case temperature (tj) = 25 c unless otherwise specified parameter bvdss drain-to-source breakdown voltage rds(on) static drain-to-source on-state resistance cd 'd(on) on-stale dram current @ vgs(th) o*? threshold voltage 9(5 forward transconductance (3) 'oss zef gat* vottafl* drain current 'css gate-to-source leakage forward 'gss gale-to-source leakage reverse qg total gate charge qgs gate- to- source charge qgo- gate-to-drain ("miller") charge "dfon) turn-on deiay time tr rise time tyoff) turn-off delay time 1, fall time lq internal drain inductance ls internal source inductance cim input capacitance c^, output capacitance cry8 reverse transfer capacitance r?oc junction-to-case rihca case-to-sink riuja junction-to-ambient mounting torque type irfp380 ihfp362 IRFP360 irfp362 irfp3so irfp362 all all all all all all all all all all all all all all all all all all all all mm 400 ? - 23 20 2.0 14 - - - - - - - - - - - - - - - - typ. - 0.18 0.20 - - 21 - - - - 68 17 24 22 94 80 66 5.0 13 4000 550 97 - 0.24 - - . max - 020 0.25 - 4.0 - 250 1000 500 -500 100 25 36 33 140 120 99 - - ? 0.50 - 40 10 units v q a v s(d) m* na na nc nc nc ns. ns ns ns nh nh pf pf pf ?c/w ?c/w -c/w in.etbs. tesi conditions vqs - 0v. id - 2soma vqs . iov. id - isa vds> !d(on) x rds |
